Interference fringe-free transmission spectroscopy of amorphous thin films

Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect of deposition temperature on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide thin films Based on optical fundamentals, we present in this article a practical method to obtain an interference fringe-free transmission spectrum for hydrogenated amorphous solid thin films. From this spectrum, reliable optical properties, such as the Urbach edge and optical band gap of the thin films, can be extrapolated directly. In terms of the Brewster angle accuracy, the margins of error of the proposed method due to material dispersion are less than Ϯ1% for hydrogenated amorphous silicon and less than Ϯ1.2% for hydrogenated amorphous silicon nitride. These figures are less than the detectable limit of the proposed method.